Epi Deposition Equipment &
Reactor Types

Wafersclean
Reactor

Applied Materials Centura 5200

  • Epi Thickness: .01um to 150um
  • Single Wafer Processing
  • Silicon Source Gas: TCS
  • Wafer Diameters: 150mm, & 200mm
  • Dopant Species: Boron, Phosphorus, Arsenic
  • Epi Resistivity: 0.01 Ohm-cm to Intrinsic Resistivity
  • Layer Uniformities: < 2.0% / 4.0%
  • Multi-Layer / Ramped Layer
Aixtron

AIXTRON G5 WW C

  • Planetary reactor for 8x150mm SiC with single wafer rotation
  • Efficient gas utilization in growth chamber and wafer-level temperature control
  •  Cassette-to-cassette wafer handling
  •  Fast epitaxial processing
  • AutoSat feature for within batch uniformity
  • SECS-GEM factory interface