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Technology:



GlobiTech can produce a wide variety of silicon epi products.

  • Diameter - 100mm, 125mm, 150mm, 200mm

  • Epi Thickness - 0.1um to 150um

  • Epi Resistivity - 0.01 to 1000 Ohm-cm

  • Layer Uniformities - <2% for <20um, <4% for >20um

  • Surface Defects - <20 @ 0.2um LSE

  • Dopant Source - Boron, Phosphorus, or Arsenic

 

 GlobiTech has access to a broad range of substrate types from multiple silicon wafer suppliers.

  • 100mm, 125mm, 150mm, and 200mm wafers.

  • Heavily doped Arsenic

  • Red Phosphorus

  • Antimony

  • Boron

  

Processes Available:

 

 

Single Wafer Epi Deposition

  • 125mm, 150mm, and 200mm wafers

  • Atmospheric Pressure

  • Reduce Pressure

  • Improved Autodoping Control Process (Improved Breakdown Voltage Uniformity).

  • SOI Thickening

  • Dual Layer / Ramped Layer

  • Buried Layer Deposition 

 

Batch Epi Deposition on 100mm, 125mm, or 150mm wafers.

  • Atmospheric Pressure

  • Thick Epi/High Voltage Processes

  • Processes for Deposition on Red Phos and As Substrates

  • Dual Layer / Ramped Layer

 

Wafer Cleaning

 

 

Oxide Strip

 

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