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Epi Deposition Equipment (Reactor Types):




Applied Materials Centura 5200

  • Epi thickness: <25um
  • Single wafer processing
  • Reduced & Atmospheric Pressure
  • Silicon Source Gas: TCS or DCS
  • Wafer Diameters: 125mm, 150mm, and 200mm
  • Dopant species: Boron, Phosphorus, Arsenic
  • Epi resistivity: 0.01 Ohm-cm to intrinsic resistivity
  • Layer Uniformities: < 2.0%
  • Multi Layer / Ramped Layer

 

CSD EpiPro 5000

  • Epi thickness: 5 – 150um
  • Batch Processing
  • Wafer Diameters: 100mm, 125mm, and 150mm
  • Atmospheric Pressure
  • Silicon Source Gas: TCS
  • Dopant species: Boron, Phosphorus, Arsenic
  • Epi resistivity: 0.01 Ohm-cm to intrinsic resistivity
  • Layer Uniformities: < 5.0%
  • Multi Layer / Ramped Layer

 

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